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isc N-Channel MOSFET Transistor STF7NM60N FEATURES ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 900mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃).
·Drain Current
–ID= 5A@ TC=25℃
·Drain Source Voltage-
: VDSS= 600V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 900mΩ(Max)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Switching application
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage
600
V
VGS
Gate-Source Voltage-Continuous
±25
V
ID
Drain Current-Continuous
5
A
IDM
Drain Current-Single Pluse
20
A
PD
Total Dissipation @TC=25℃
20
W
TJ
Max. Operating Junction Temperature
150
℃
Tstg
Storage Te.
STF7NM60N - STMicroelectronics
This second generation of MDmesh™ technology, applies the benefits of the multiple drain process to STMicroelectronics’ .
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