STF42N60M2-EP - STMicroelectronics

STF42N60M2-EP N-channel Power MOSFET

These devices are N-channel Power MOSFETs developed using MDmesh™ M2 EP enhanced performance technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics with very low turn-off switching losses, rendering them suitable for the most demanding very high frequency convert.

Features

Order codes VDS @ TJmax RDS(on) max ID STF42N60M2-EP 650 V 0.087 Ω 34 A  STFW42N60M2-EP 3 2 1 TO-220FP TO-3PF    Figure 1. Internal schematic diagram '
• Extremely low gate charge
• Excellent output capacitance (COSS) profile
• Very low turn-off switching losses
• 100% avalanche tested
• Zener-protected Applications
• Switching applications
• Tailored for very high frequency converters (f > 150 kHz)
* 6 AM01476v1 Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 EP enhanced performance technology. Thanks to their strip layout and impr.