STF23N80K5 - STMicroelectronics

STF23N80K5 N-channel Power MOSFET

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Order code STF23N80K5 Table 1: Device summary Marking Package 23N.

Features

Order code STF23N80K5 VDS 800 V RDS(on) max. 0.28 Ω ID 16 A PTOT 35 W
 Industry’s lowest RDS(on) x area
 Industry’s best figure of merit (FoM)
 Ultra low gate charge
 100% avalanche tested
 Zener-protected Applications
 Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Order code STF23N80K5 Table 1: Device sum.