STF18N55M5 - STMicroelectronics

STF18N55M5 N-channel Power MOSFET

These devices are N-channel Power MOSFETs based on the MDmesh™ M5 innovative vertical process technology combined with the well-known PowerMESH™ horizontal layout. The resulting products offer extremely low on-resistance, making them particularly suitable for applications requiring high power and superior efficiency. DS12715 - Rev 1 - August 2018 For furthe.

Features

TAB ) 3 t(s 1 c D2PAK 3 2 1 TO-220FP Produ D(2, TAB) Order code VDS @ Tjmax. RDS(on)max. STB18N55M5 STF18N55M5 600 V 0.192 Ω
• Extremely low RDS(on)
• Low gate charge and input capacitance
• Excellent switching performance
• 100% avalanche tested Package D2PAK TO-220FP lete Applications so G(1)
• Switching applications ) - Ob S(3) AM01475v1_noZen roduct(s Product status link te P STB18N55M5 Obsole STF18N55M5 Description These devices are N-channel Power MOSFETs based on the MDmesh™ M5 innovative vertical process technology combined with the well-known PowerMESH™ horizontal la.