STF14N80K5 - STMicroelectronics

STF14N80K5 N-channel Power MOSFET

These very high voltage N-channel Power MOSFET are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Table 1: Device summary Marking Package Packing 14N80K5 TO-220.

Features

Order code STF14N80K5 STFI14N80K5 VDS 800 V RDS(on) max. 0.445 Ω ID 12 A TO-220FP I2PAKFP (TO-281) Figure 1: Internal schematic diagram D(2)
 Industry’s lowest RDS(on) x area
 Industry’s best figure of merit (FoM)
 Ultra-low gate charge
 100% avalanche tested
 Zener-protected Applications
 Switching applications G(1) S(3) Order code STF14N80K5 STFI14N80K5 AM15572v1_no_tab Description These very high voltage N-channel Power MOSFET are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance a.