Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charg.
Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Peak Diode Recovery voltage slope Storage T emperature Max. Operating Junction Temperature
o o o
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
Value 500 500 ± 30 38 24 152 400 3.2 4.5 -65 to 150 150
( 1) ISD ≤38 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Un it V V V A A A W W /o C V/ns
o o
C C 1/8
(
•) Pulse width limited by safe operating area
.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STE38NB50 |
ST Microelectronics |
N - CHANNEL PowerMESH MOSFET | |
2 | STE38N60 |
STMicroelectronics |
N-channel MOSFET | |
3 | STE30NK90Z |
STMicroelectronics |
N-CHANNEL MOSFET | |
4 | STE3300-16T3MI |
Vishay |
Wet Tantalum Capacitors | |
5 | STE3300-30T4MI |
Vishay |
Wet Tantalum Capacitors | |
6 | STE334S |
SamHop Microelectronics |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
7 | STE336S |
SamHop Microelectronics |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
8 | STE339S |
SamHop Microelectronics |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
9 | STE36N50 |
ST Microelectronics |
N Channel Enhancement Mode Power MOS Transistor in Isotop Package | |
10 | STE36N50 |
ST Microelectronics |
N-Channel Enhancement Mode Power MOS Transistor in Isotop Package | |
11 | STE36N50-DA |
ST Microelectronics |
N-Channel Enhancement Mode Power MOS Transistor and Ultra-Fast Diode in Isotop Package | |
12 | STE36N50-DK |
ST Microelectronics |
N-Channel Enhancement Mode Power MOS Transistor and Ultra-Fast Diode in Isotop Package |