STD80N6F6 - STMicroelectronics

STD80N6F6 N-CHANNEL POWER MOSFET

This device is an N-channel Power MOSFET th developed using the 6 generation of STripFET™ DeepGATE™ technology, with a new gate * structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. 6 $0Y Order code STD80N6F6 Table 1. Device summary Marking Packages 80N6F6 DPAK Packaging Tape and reel January 2014 This is.

Features

7$%   '3$. Order code STD80N6F6 VDS 60 V RDS(on) max. ID 5 mΩ (1) 80 A 1. Current limited by package
• Designed for automotive applications and AEC-Q101 qualified
• Low gate charge
• Very low on-resistance
• High avalanche ruggedness Figure 1. Internal schematic diagram 'Ć7$% Applications
• Switching applications Description This device is an N-channel Power MOSFET th developed using the 6 generation of STripFET™ DeepGATE™ technology, with a new gate
* structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. 6 $0Y Order code STD80N6F6 T.