This STripFET™ DeepGATE™ Power MOSFET technology is among the latest improvements, which have been especially tailored to minimize on-state resistance, with a new gate structure, providing superior switching performance. 3 2 1 TO-247 3 2 1 TO-220 3 1 DPAK 3 1 D²PAK Figure 1. Internal schematic diagram $ ' Table 1. Device summary Order codes STB7.
Type
STB70N10F4 STD70N10F4 STP70N10F4 STW70N10F4
VDSS 100 V 100 V 100 V 100 V
RDS(on) max < 0.0195 Ω < 0.0195 Ω < 0.0195 Ω < 0.0195 Ω
ID 65 A 60 A 65 A 65 A
■ Exceptional dv/dt capability
■ Extremely low on-resistance RDS(on)
■ 100% avalanche tested
Application
■ Switching applications
Description
This STripFET™ DeepGATE™ Power MOSFET technology is among the latest improvements, which have been especially tailored to minimize on-state resistance, with a new gate structure, providing superior switching performance.
3 2 1
TO-247
3 2 1
TO-220
3 1
DPAK
3 1
D²PAK
Figure 1. Internal sche.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STD70N02L |
ST Microelectronics |
N-CHANNEL MOSFET | |
2 | STD70N02L-1 |
ST Microelectronics |
N-CHANNEL MOSFET | |
3 | STD70N03L |
ST Microelectronics |
N-CHANNEL MOSFET | |
4 | STD70N03L-1 |
ST Microelectronics |
N-CHANNEL MOSFET | |
5 | STD70NH02L |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
6 | STD70NH02L-1 |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
7 | STD70NS04ZL |
STMicroelectronics |
N-channel Power MOSFET | |
8 | STD70 |
Sirectifier Semiconductors |
Thyristor-Diode Modules | |
9 | STD70GK08 |
Sirectifier Semiconductors |
Thyristor-Diode Modules | |
10 | STD70GK12 |
Sirectifier Semiconductors |
Thyristor-Diode Modules | |
11 | STD70GK14 |
Sirectifier Semiconductors |
Thyristor-Diode Modules | |
12 | STD70GK16 |
Sirectifier Semiconductors |
Thyristor-Diode Modules |