Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charg.
(
• ) P tot Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 o C Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor dv/dt( 1) Ts tg Tj Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature
o o
Value 300 300 ± 30 5 3 20 55 0.44 5.5 -65 to 150 150
( 1) ISD ≤ 5Α, δι/δτ ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Un it V V V A A A W W /o C V/ns
o o
C C 1/9
(
•) Pulse width limited by safe operating area
August 1999
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STD5NB20 |
ST Microelectronics |
N - CHANNEL PowerMESHO MOSFET | |
2 | STD5N20 |
ST Microelectronics |
N - CHANNEL POWER MOS TRANSISTOR | |
3 | STD5N20L |
STMicroelectronics |
N-CHANNEL 200V - 0.65 - 5A DPAK STripFET MOSFET | |
4 | STD5N52K3 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
5 | STD5N52U |
ST Microelectronics |
N-Channel Power MOSFET | |
6 | STD5N60DM2 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
7 | STD5N60M2 |
STMicroelectronics |
N-channel Power MOSFET | |
8 | STD5N62K3 |
STMicroelectronics |
N-channel MOSFET | |
9 | STD5N65M6 |
STMicroelectronics |
N-channel Power MOSFET | |
10 | STD5N80K5 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
11 | STD5N95K3 |
STMicroelectronics |
N-Channel Power MOSFET | |
12 | STD5N95K5 |
STMicroelectronics |
N-channel Power MOSFET |