STD45NF75 - STMicroelectronics

STD45NF75 N-CHANNEL POWER MOSFET

This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS ■ HIGH CURRENT, SWITCHING .

Features

nt (continuous) at TC = 25°C ID Drain Current (continuous) at TC = 100°C IDM(
•) Drain Current (pulsed) Ptot Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope dv/dt (1) Single Pulse Avalanche Energy EAS (2) Tstg Storage Temperature Tj Operating Junction Temperature (
•) Pulse width limited by safe operating area. (
*
*) Current Limited by Package Value 75 75 ± 20 40 30 160 100 0.67 20 500 -55 to 175 Unit V V V A A A W W/°C V/ns mJ °C (1) ISD ≤40A, di/dt ≤800A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX (2) Starting Tj = 25 oC, ID = 20 A, VDD = 40V April 2004 1/12 STD45NF75 .