STD3NK80Z-1 - STMicroelectronics

STD3NK80Z-1 N-channel Power MOSFET

This high-voltage device is a Zener-protected N-channel Power MOSFET developed S(3) using the SuperMESH technology by STMicroelectronics, an optimization of the well- AM01476v1_tab established PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding app.

Features

TAB 3 2 1 IPAK D(2, TAB) Order code VDS STD3NK80Z-1 800 V
• 100% avalanche tested
• Gate charge minimized
• Very low intrinsic capacitance
• Zener-protected Applications RDS(on) max. 4.5 Ω ID 2.5 A
• Switching applications G(1) Description This high-voltage device is a Zener-protected N-channel Power MOSFET developed S(3) using the SuperMESH technology by STMicroelectronics, an optimization of the well- AM01476v1_tab established PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most dema.