STD1NK80Z - STMicroelectronics

STD1NK80Z N-channel Power MOSFET

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutiona.

Features

TYPE VDSS RDS(on) ID Pw STQ1NK80ZR-AP STN1NK80Z STD1NK80Z STD1NK80Z-1 800 V 800 V 800 V 800 V < 16 Ω < 16 Ω < 16 Ω < 16 Ω 0.3 A 0.25A 1.0 A 1.0 A 3W 2.5 W 45 W 45 W
■ TYPICAL RDS(on) = 13Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ ESD IMPROVED CAPABILITY
■ 100% AVALANCHE TESTED
■ NEW HIGH VOLTAGE BENCHMARK
■ GATE CHARGE MINIMIZED DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the mos.