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AM01476v1_tab This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. Product status link STD13N60M2 Product summary .
Order code
VDS at TJ max.
RDS(on) max.
ID
STD13N60M2
650 V
380 mΩ
11 A
• Extremely low gate charge
•
Excellent output capacitance (Coss) profile
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
Description
AM01476v1_tab
This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.
Product status link STD13N60M2
Prod.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | STD13N60DM2 |
STMicroelectronics |
N-channel Power MOSFET |
|
| 2 | STD13N65M2 |
STMicroelectronics |
N-channel Power MOSFET |
|
| 3 | STD13N50DM2AG |
STMicroelectronics |
N-channel Power MOSFET |
|
| 4 | STD13NM50N |
STMicroelectronics |
N-CHANNEL POWER MOSFET |
|
| 5 | STD13NM60N |
ST Microelectronics |
N-CHANNEL POWER MOSFET |
|
| 6 | STD13NM60N |
INCHANGE |
N-Channel MOSFET |
|
| 7 | STD13NM60ND |
STMicroelectronics |
N-Channel Power MOSFET |
|
| 8 | STD13NM60ND |
INCHANGE |
N-Channel MOSFET |
|
| 9 | STD130 |
Sirectifier Semiconductors |
Thyristor-Diode Modules |
|
| 10 | STD13003 |
AUK |
NPN Silicon Power Transistor |
|
| 11 | STD13003 |
ST Microelectronics |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
|
| 12 | STD13003D |
KODENSHI |
NPN Silicon Power Transistor |
|