STD11N50M2 - STMicroelectronics

STD11N50M2 N-CHANNEL POWER MOSFET

These devices are N-channel Power MOSFETs developed using the MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters. Product status STD11N50M2 STF11N50M2 Product summary O.

Features

Order code VDS @ TJmax RDS(on)max. STD11N50M2 STF11N50M2 550 V 0.53 Ω
• Extremely low gate charge
• Excellent output capacitance (COSS) profile
• 100% avalanche tested
• Zener-protected ID 8A Package DPAK TO-220FP Applications
• Switching applications Description These devices are N-channel Power MOSFETs developed using the MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters. Product status STD11N.