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The STC6301D is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage application such as power management, where high-side s.
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | STC634 |
ETC |
(STCxxx) UP Supervisor Circuits |
|
| 2 | STC601F |
AUK |
NPN Silicon Transistor |
|
| 3 | STC603PI |
AUK |
NPN Silicon Transistor |
|
| 4 | STC6075Q |
AUK |
NPN Silicon Transistor |
|
| 5 | STC62WV1024 |
STC |
VERY LOW POWER VOLTAGE CMOS SRAM |
|
| 6 | STC62WV12816 |
STC |
Very Low Power/Voltage CMOS SRAM |
|
| 7 | STC62WV1M8 |
STC |
Very Low Power/Voltage CMOS SRAM |
|
| 8 | STC62WV256 |
STC |
VERY LOW POWER/VOLTAGE CMOS SRAM |
|
| 9 | STC62WV25616 |
STC |
Very Low Power/Voltage CMOS SRAM |
|
| 10 | STC62WV2568 |
STC |
Very Low Power/Voltage CMOS SRAM |
|
| 11 | STC62WV51216 |
STC |
Very Low Power/Voltage CMOS SRAM |
|
| 12 | STC62WV5128 |
STC |
Very Low Power/Voltage CMOS SRAM |
|