STC5551F - KODENSHI KOREA

STC5551F NPN Silicon Transistor

• General purpose amplifier • High voltage application PIN Connection Features • High collector breakdown voltage : VCBO = 180V, VCEO = 160V • Low collector saturation voltage : VCE(sat)=0.5V(MAX.) SOT-89 Ordering Information Type No. STC5551F N51: DEVICE CODE, Marking N51 □YWW □ : hFE rank, YWW(Y Package Code SOT-89 : Year code, WW : Weekly code) Ab.

Features

• High collector breakdown voltage : VCBO = 180V, VCEO = 160V
• Low collector saturation voltage : VCE(sat)=0.5V(MAX.) SOT-89 Ordering Information Type No. STC5551F N51: DEVICE CODE, Marking N51 □YWW □ : hFE rank, YWW(Y Package Code SOT-89 : Year code, WW : Weekly code) Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current (Ta=25°C) Symbol VCBO VCEO VEBO IC ICP
* PC PC
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* TJ Tstg Ratings 180 160 6 0.6 1.2 0.5 1 150 -55~150 Unit V V V A(DC) A(Pulse) W °C °C Collector power dissipation Junction temperature Storage .