STC3116E - SamHop

STC3116E N-Channel Enhancement Mode Field Effect Transistor

Gre r Pro STC3116E Ver 1.0 S a mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max 94 @ VGS=10V 30V 2A 107 @ VGS=4.5V 139 @ VGS=2.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. D S OT -323 D S G S G ABSOLUTE MAX.

Features

Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. D S OT -323 D S G S G ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a TA=25°C TA=70°C TA=25°C TA=70°C Limit 30 ±12 2 1.6 8 1 0.64 -55 to 150 Units V V A A A W W °C Maximum Power Dissipation a Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient 125 °C/W Details are subject to chan.