STA415A - Sanken

STA415A Power Transistor Array

Power Transistor Array STA415A Absolute Maximum Ratings (Ta=25ºC) Symbol VCBO VCEO VEBO IC IB PT Tj Tstg * PW 1ms, Duty Ratings 35± 5 36± 5 6 2 (pulse 3*) 30 4 (Ta = 25ºC) 18 (Tc = 25ºC) 150 –55 to +150 25% Unit V V V A mA W W ºC ºC Electrical Characteristics Symbol ICBO IEBO VCEO hFE VCE (sat) VFEC RB RBE Es/b Test Conditions VCB = 30V VEB = 6V IC = 25mA .

Features

) — IB Temperature Characteristics 0.5 8mA 5mA (IC = 0.5A) s VCE (sat) — IC Temperature Characteristics 3 IC /IB = 100 3 12 A m VCE (sat) (V) IC (A) 3mA 2mA VCE (sat) (V) 2 2 Ta = 125ºC 75ºC 25ºC
  –40ºC 0.25 1 IB = 1mA Ta = 125ºC 75ºC 25ºC
  –40ºC 1 0 0 0 1 2 3 4 5 6 1 10 100 400 0 0 0.5 1 0.5 1.2 4.0 L = 10mH, single pulse C1.5 ±0.5 ±0.2 ±0.2± 5 VCE (V) IB (mA) IC (A) s hFE — IC Temperature Characteristics 3000 (VCE = 4V) s ton
•tstg
•tf — IC Characteristics (typ.) 50 s j-a — t Characteristics Single pulse 20 ton
• tstg
• tf (µS) hFE 500 Ta = 125ºC 75ºC 25º.