ST60-40MF TVS 100A, 6000W Feature Peak pulse power:6000W SMD Available for automotive use Pb free terminal RoHS:Yes OUTLINE Package (House Name): MCP Equivalent circuit Absolute Maximum Ratings (unless otherwise specified : Tl=25℃) Item Storage temperature Operating junction temperature Maximum surge reverse current Maximum surge reverse current Maximum .
ance Forward voltage Temperature coefficient VBR IR Rth(j-l) Rth(j-a) VF rz IR=1mA, Pulse measurement VR=32V, Pulse measurement Junction to lead, On glass-epoxy substrate ※ Junction to ambient, On glass-epoxy substrate ※ IF=30A, Pulse Measurement ※︓See the original Specifications Ratings MIN TYP MAX 36.5 44 5 5 45 1.3 0.12 Unit V μA ℃/W ℃/W V %/℃ Shindengen Electric Manufacturing Co., Ltd. 2/6 ST60-40MF_Rev.01(2020.01) CHARACTERISTIC DIAGRAMS Shindengen Electric Manufacturing Co., Ltd. 3/6 ST60-40MF_Rev.01(2020.01) Shindengen Electric Manufacturing Co., Ltd. 4/6 ST60-40MF_R.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | ST60-48MF |
SHINDENGEN |
TVS | |
2 | ST6006 |
Stanson Technology |
N Channel Enchancement Mode MOSFET | |
3 | ST600K |
ST Microelectronics |
LOW VOLTAGE NPN POWER TRANSISTOR | |
4 | ST601 |
KODENSHI |
PHOTOTRANSISTORS | |
5 | ST60100 |
Microsemi Corporation |
Silicon Dual Power Rectifier | |
6 | ST60100C |
SMC Diode |
SCHOTTKY RECTIFIER | |
7 | ST6020 |
Microsemi Corporation |
Silicon Dual Power Rectifier | |
8 | ST6040 |
Microsemi Corporation |
Silicon Dual Power Rectifier | |
9 | ST6060 |
Microsemi Corporation |
Silicon Dual Power Rectifier | |
10 | ST6080 |
Microsemi Corporation |
Silicon Dual Power Rectifier | |
11 | ST60P |
Semtech Corporation |
SILICON SCHOTTKY BARRIER DIODE | |
12 | ST615 |
KODENSHI |
PHOTOTRANSISTORS |