ST1510FX - INCHANGE

ST1510FX NPN Transistor

·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 750V(Min.) ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Electronic ballast for fluorescent lighting. ·Switch mode power supplies. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Base Voltage VBE= 0.

Features

otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 750 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 9 V VCE(sat) Collector-Emitter Saturation Voltage IC= 6.0A; IB= 1.5A 2.0 V VBE(sat) Base-Emitter Saturation Voltage ICES Collector Cutoff Current IEBO Emitter Cutoff Current IC= 6.0A; IB= 1.5A VCE= 1500V VCE= 1500V;TC=125℃ VEB= 9V; IC= 0 1.1 V 0.2 2.0 mA 1.0 mA hFE-1 DC Current Gain IC= 1A; VCE= 5V 15 hFE-2 DC Current Gain IC= 6A ; VCE= 5V 6.5 9.5 hFE-3 DC Current Gain .