It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Absolute Rating Symbol ID @ TC = 25°C IDM PD.
Advanced MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150℃ operating temperature
SSS4008J8L
Pin Assignments
Schematic Diagram
Description
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applica.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SSS45N20B |
Fairchild Semiconductor |
Straight 1-Row BergStik II Headers | |
2 | SSS4N60 |
Tuofeng Semiconductor |
N-CHANNEL MOSFET | |
3 | SSS4N60AS |
Fairchild Semiconductor |
Advanced Power MOSFET | |
4 | SSS4N60B |
Fairchild Semiconductor |
Straight 1-Row BergStik II Headers | |
5 | SSS4N70 |
Samsung |
N-Channel Power MOSFETS | |
6 | SSS4N80 |
Samsung |
N-Channel Power MOSFETS | |
7 | SSS4N80AS |
Fairchild Semiconductor |
Straight 1-Row BergStik II Headers | |
8 | SSS1004 |
Silikron Semiconductor |
N-Channel enhancement mode power field effect transistors | |
9 | SSS1004 |
GOOD-ARK |
N-Channel MOSFET | |
10 | SSS1004A7 |
Silikron Semiconductor |
N-Channel enhancement mode power field effect transistors | |
11 | SSS1004AL |
Silikron |
MOSFET | |
12 | SSS1004L |
Silikron |
MOSFET |