SSR52N60H-C - SeCoS

SSR52N60H-C N-Channel Super Junction Power MOSFET

The SSR52N60H-C is power MOSFET using Super Junction Technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of low EMI to designers as well as low switching loss, which provide excellent RDS(ON) and gate charge for mo.

Features

 Advanced Super Junction Technology
 Super Low Gate Charge
 Green Device Available MARKING 52N60H  = Date Code ORDER INFORMATION 2 Part Number Type Drain SSR52N60H-C Lead (Pb)-free and Halogen-free 1 Gate 3 Source REF. A B C D E F G H Millimeter Min. Max. 15.75 16.13 4.83 5.21 20.8 21.1 19.81 20.32 16.25 17.65 6.04 6.30 5.44 BSC 2.29 2.55 REF. I J K L M N P Millimeter Min. Max. 2.87 3.22 0.55 0.69 1.12 1.33 4.10 4.44 1.91 2.39 Ø3.56 Ø3.65 13.46 14.16 ABSOLUTE MAXIMUM RATINGS Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drai.