SSM10N954L - Toshiba

SSM10N954L Silicon N-Channel MOSFET

MOSFETs Silicon N-Channel MOS SSM10N954L SSM10N954L 1. Applications • Battery protection circuits 2. Features (1) Low source-source on-resistance : RSS(ON) = 2.2 mΩ (typ.) (@VGS = 3.8 V) : RSS(ON) = 2.1 mΩ (typ.) (@VGS = 4.5 V) (2) RoHS Compatible (Note 1) (3) Halogen-free Note 1: The RoHS is the Directive 2011/65/EU of the European Parliament and of the C.

Features

(1) Low source-source on-resistance : RSS(ON) = 2.2 mΩ (typ.) (@VGS = 3.8 V) : RSS(ON) = 2.1 mΩ (typ.) (@VGS = 4.5 V) (2) RoHS Compatible (Note 1) (3) Halogen-free Note 1: The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 3. Packaging and Pin Assignment TCSPAC-153001 ©2020-2023 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2020-11 2023-10-10 Rev.5.0 SSM10N954L 4. Absolute Maximum Ratings (Note) (Unless o.