The SSM0410S provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. K A M SOT-223 4 Top View CB 1 2 3 L E D .
Lower Gate Charge Simple Drive Requirement Fast Switching Characteristic
F
G
H
J
MARKING
0410S
REF. A B C D E F
= Date code
Millimeter Min. Max. 6.20 6.70 6.70 7.30 3.30 3.70 1.42 1.90 4.50 4.70 0.60 0.82
REF. G H J K L M
Millimeter Min. Max. 0.10 0.25 0.35 2.30 REF. 2.90 3.10
PACKAGE INFORMATION
Package SOT-223 MPQ 2.5K Leader Size 13 inch
G
D
S
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1@VGS=10V Pulsed Drain Current Power Dissipation
3 2
Symbol
VDS VGS TA=25.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SSM0410-C |
SeCoS |
N-Channel MOSFET | |
2 | SSM04N70BGF-A |
Silicon Standard |
N-channel Enhancement-mode Power MOSFET | |
3 | SSM04N70BGF-H |
Silicon Standard |
N-channel Enhancement-mode Power MOSFET | |
4 | SSM04N70BGP-A |
Silicon Standard |
N-channel Enhancement-mode Power MOSFET | |
5 | SSM04N70BP |
Silicon Standard |
N-Channel Enhancement Mode Power MOSFET | |
6 | SSM04N70BR |
Silicon Standard |
N-Channel Enhancement Mode Power MOSFET | |
7 | SSM01N60J |
Silicon Standard |
(SSM01N60H) N Channel Enhancement-Mode Power MOSFET | |
8 | SSM01N60P |
Silicon Standard |
N Channel Enhancement Mode Power MOSFET | |
9 | SSM02N60P |
ETC |
N CHANNEL ENHANCEMENT MODE | |
10 | SSM0311-C |
SeCoS |
P-Channel Enhancement Mode Power MOSFET | |
11 | SSM03N70GH |
Silicon Standard |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
12 | SSM03N70GJ |
Silicon Standard |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |