SSI318-C - SeCoS

SSI318-C Dual N-Channel MOSFET

The SSI318-C is the highest performance trench N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SSI318-C meet the RoHS and Green Product requirement with full function reliability approved. SOT-563 A B FEATURES Reliable and Rugged Green Device Availabl.

Features

Reliable and Rugged Green Device Available ESD Protection MARKING 318 PACKAGE INFORMATION Package MPQ SOT-563 3K Leader Size 7 inch J D CF GH E REF. A B C D E Millimeter Min. Max. 1.50 1.70 1.50 1.70 0.525 0.60 1.10 1.30 - 0.05 REF. F G H J Millimeter Min. Max. 0.09 0.16 0.45 0.55 0.17 0.27 0.10 0.30 ORDER INFORMATION Part Number Type SSI318-C Lead (Pb)-free and Halogen-free ABSOLUTE MAXIMUM RATINGS Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current 1, @VGS=4.5V Pulsed Drain Current 2 TA=25°C TA=85°C ID IDM Power Dissipation TA.