It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Absolute Max Rating: Symbol ID @ TC = 25°C .
Advanced MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150℃ operating temperature
SSFT3102
Pin Assignments
Schematic Diagram
Description:
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applica.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SSFT3904 |
Silikron Semiconductor |
MOSFET | |
2 | SSFT3904 |
GOOD-ARK |
N-Channel MOSFET | |
3 | SSFT3904J7-HF |
Silikron |
MOSFET | |
4 | SSFT3904U |
Silikron Semiconductor |
MOSFET | |
5 | SSFT3904U |
GOOD-ARK |
N-Channel MOSFET | |
6 | SSFT3906 |
Silikron Semiconductor |
MOSFET | |
7 | SSFT3906 |
GOOD-ARK |
N-Channel MOSFET | |
8 | SSFT4002 |
Silikron Semiconductor |
MOSFET | |
9 | SSFT4003 |
Silikron Semiconductor |
MOSFET | |
10 | SSFT4003 |
GOOD-ARK |
N-Channel MOSFET | |
11 | SSFT4003A |
Silikron Semiconductor |
MOSFET | |
12 | SSFT4003A |
GOOD-ARK |
N-Channel MOSFET |