It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Absolute Max Rating: Symbol ID @ TC = 25°C .
Advanced MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150℃ operating temperature
SSF6808D5X
D
Marking and Pin Assignments
Schematic Diagram
Description:
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SSF6808D |
Silikron |
MOSFET | |
2 | SSF6808D3X |
Silikron |
MOSFET | |
3 | SSF6808D4X |
Silikron |
MOSFET | |
4 | SSF6808 |
Silikron Semiconductor Co |
Power switching application | |
5 | SSF6808 |
GOOD-ARK |
68V N-Channel MOSFET | |
6 | SSF68083X |
Silikron |
MOSFET | |
7 | SSF6808A |
GOOD-ARK |
68V N-Channel MOSFET | |
8 | SSF6808A3X |
Silikron |
MOSFET | |
9 | SSF6808F3X |
Silikron |
MOSFET | |
10 | SSF6808J73X |
Silikron |
MOSFET | |
11 | SSF6807 |
Silikron Semiconductor Co |
Power switching application | |
12 | SSF6814 |
Silikron |
MOSFET |