It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Absolute Max Rating: Symbol ID @ TC = 25°C .
Advanced MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150℃ operating temperature
SSF4013H1
Pin Assignments
Schematic Diagram
Description:
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applic.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SSF4013J7 |
Silikron |
MOSFET | |
2 | SSF4013J8 |
Silikron |
MOSFET | |
3 | SSF4015 |
GOOD-ARK |
P-Channel MOSFET | |
4 | SSF4015 |
Silikron Semiconductor |
MOSFET | |
5 | SSF4004 |
Silikron Semiconductor |
MOSFET | |
6 | SSF4004S |
Silikron Semiconductor |
MOSFET | |
7 | SSF4006 |
Silikron Semiconductor |
MOSFET | |
8 | SSF4008J7L |
Silikron |
MOSFET | |
9 | SSF4008J8L |
Silikron |
MOSFET | |
10 | SSF4031C1 |
Silikron Semiconductor |
MOSFET | |
11 | SSF4032CH3 |
Silikron Semiconductor |
MOSFET | |
12 | SSF4106DL |
Silikron |
MOSFET |