It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Absolute Max Rating: Symbol ID @ TC = 25°C .
Advanced MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150℃ operating temperature
SSF3006DBC
Marking and Pin Assignments
Schematic Diagram
Description:
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SSF3006DB |
Silikron |
MOSFET | |
2 | SSF3002EG1 |
Silikron |
MOSFET | |
3 | SSF3014 |
Silikron Semiconductor Co |
N-Channel MOSFET | |
4 | SSF3018 |
Silikron Semiconductor Co |
N-Channel MOSFET | |
5 | SSF3018D |
Silikron Semiconductor Co |
N-Channel MOSFET | |
6 | SSF3022 |
Silikron Semiconductor Co |
N-Channel MOSFET | |
7 | SSF3022D |
Silikron Semiconductor Co |
N-Channel MOSFET | |
8 | SSF3028C1 |
Silikron |
MOSFET | |
9 | SSF3035L |
Silikron |
MOSFET | |
10 | SSF3036C |
GOOD-ARK |
30V Complementary MOSFET | |
11 | SSF3036C |
Silikron Semiconductor |
MOSFET | |
12 | SSF3051G7 |
Silikron Semiconductor |
MOSFET |