It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications Absolute max Rating: Symbol ID @ TC =.
Advanced trench MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150℃ operating temperature
Description:
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications
Absolute max Rating:
Sym.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SSF1320N |
SeCoS Halbleitertechnologie |
N-channel MOSFET | |
2 | SSF1321P |
SeCoS |
P-Channel MOSFET | |
3 | SSF1341 |
GOOD-ARK |
12V P-Channel MOSFET | |
4 | SSF1341 |
Silikron |
MOSFET | |
5 | SSF1341UP |
Silikron |
MOSFET | |
6 | SSF13N50 |
Silikron |
MOSFET | |
7 | SSF13N50F |
Silikron |
MOSFET | |
8 | SSF1006 |
Silikron |
MOSFET | |
9 | SSF1006A |
Silikron |
MOSFET | |
10 | SSF1006H |
Silikron |
MOSFET | |
11 | SSF1007 |
Silikron |
MOSFET | |
12 | SSF1009 |
Silikron |
MOSFET |