It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Absolute Max Rating: Symbol ID @ TC = 25°C .
Advanced MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150℃ operating temperature
SSF1090DX
Marking and Pin Assignments
Schematic Diagram
Description:
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SSF1090D |
Silikron |
MOSFET | |
2 | SSF1090 |
Silikron Semiconductor |
N-Channel enhancement mode trench power MOSFET | |
3 | SSF1090 |
Good-Ark |
100V N-Channel MOSFET | |
4 | SSF1090A |
Silikron |
MOSFET | |
5 | SSF1006 |
Silikron |
MOSFET | |
6 | SSF1006A |
Silikron |
MOSFET | |
7 | SSF1006H |
Silikron |
MOSFET | |
8 | SSF1007 |
Silikron |
MOSFET | |
9 | SSF1009 |
Silikron |
MOSFET | |
10 | SSF1010 |
Silikron |
MOSFET | |
11 | SSF1010A |
Silikron |
MOSFET | |
12 | SSF1016 |
Silikron Semiconductor Co |
Power switching application |