The SSD50N03 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications . TO-252(D-Pack) FEATURES Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Ava.
Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available MARKING 50N03 Date Code PACKAGE INFORMATION Package MPQ TO-252 2.5K Leader Size 13 inch A BC D 1 Gate GE 2 Drain 3 Source K HF MJ N O P REF. Millimeter Min. Max. REF. Millimeter Min. Max. A 6.35 6.80 J 2.30 REF. B 5.20 5.50 K 0.64 0.90 C 2.15 2.40 M 0.50 1.1 D 0.45 0.58 N 0.9 1.65 E 6.8 7.5 O 0 0.15 F 2.40 3.0 P 0.43 0.58 G 5.40 6.25 H 0.64 1.20 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol R.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SSD50N06-15D |
SeCoS |
N-Channel MOSFET | |
2 | SSD50N08-14D |
SeCoS |
N-Channel MOSFET | |
3 | SSD50N10 |
SeCoS |
N-Ch Enhancement Mode Power MOSFET | |
4 | SSD50N10-C |
SeCoS |
N-Ch Enhancement Mode Power MOSFET | |
5 | SSD5000 |
Solitron Devices |
N-Channel Enhancement Mode Quad D-Mos FET Analog Switch Arrays | |
6 | SSD5001 |
Solitron Devices |
N-Channel Enhancement Mode Quad D-Mos FET Analog Switch Arrays | |
7 | SSD5002 |
Solitron Devices |
N-Channel Enhancement Mode Quad D-Mos FET Analog Switch Arrays | |
8 | SSD5030N |
South Sea Semiconductor |
N-Channel MOSFET | |
9 | SSD50P03-09D |
SeCoS |
P-Channel MOSFET | |
10 | SSD50P04-C |
SeCoS |
P-Ch Enhancement Mode Power MOSFET | |
11 | SSD50P06-15D |
SeCoS |
P-Channel MOSFET | |
12 | SSD5501 |
Calogic |
N-Channel Depletion Mode 4-Channel DMOS FET Array |