SRD00111Z - Siemens Semiconductor Group

SRD00111Z Silicon PIN Photodiode in TO-Package

Silicon PIN Photodiode in TO-Package • • • • • • • • • • • SRD 00111Z Si-PIN-photodiode Designed for application in fiber-optic Transmission systems Sensitive receiver for the 1st window (850 nm) Suitable for bit rates up to 565 Mbit/s Low junction and low package capacitance Fast switching times Low dark current Low noise Hermetically sealed 3-pin metal c.

Features

0 nm λ = 950 nm Rise and fall time RL = 50 Ω, VR = 50 V, λ = 850 nm Junction capacitance at f = 1 MHz VR = 0 V VR = 1 V VR = 12 V VR = 20 V 3 dB bandwidth RL = 50 Ω, VR = 50 V, λ = 850 nm Dark current VR = 20 V, E = 0 Noise equivalent power VR = 20 V, λ = 850 nm Detectivity VR = 20 V, λ = 850 nm Temperature coefficient Ip Isolation current, VIS = 100 V Symbol Values 1 850 0.8 0.55 (≥ 0.45) 0.45 1 A/W A/W ns Unit mm2 nm A λSmax η Sλ850 Sλ950 tr; tf C0 C1 C12 C20 fc ID NEP D
* TC IIS 13 7 3.3 3 500 1 (≤ 5) 3.3 × 10−14 3.1 × 1012 0.2 0.1 (≤ 1) pF pF pF pF MHz nA W/√Hz cm√Hz/W %/K nA Semicond.