Green compound AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA=25℃ unless otherwise noted) AVERAGE FORWARD CURRENT (A) FIG.1 FORWARD CURRENT DERATING CURVE 24 SRA2050-SRA20150 20 16 12 SRA2020-SRA2040 8 4 0 50 RESISTIVE OR INDUCTIVELOAD WITH HEATSINK 60 70 80 90 100 110 120 130 140 150 CASE TEMPERATURE (oC) PEAK FORWARD SURGE CURRENT (A).
- Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition TO-220AC MECHANICAL DATA Case: TO-220AC Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix "G" on packing code - halogen-free Base P/N with prefix "H" on packing code - AEC-Q101 qualified Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test, with prefix "H" on packing code meet JESD 201.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SRA20100 |
Taiwan Semiconductor |
Schottky Barrier Rectifier | |
2 | SRA20150 |
Taiwan Semiconductor |
Schottky Barrier Rectifier | |
3 | SRA2030 |
Taiwan Semiconductor |
Schottky Barrier Rectifier | |
4 | SRA2040 |
Taiwan Semiconductor |
Schottky Barrier Rectifier | |
5 | SRA2050 |
Taiwan Semiconductor |
Schottky Barrier Rectifier | |
6 | SRA2060 |
Taiwan Semiconductor |
Schottky Barrier Rectifier | |
7 | SRA2090 |
Taiwan Semiconductor |
Schottky Barrier Rectifier | |
8 | SRA2201 |
AUK |
PNP Silicon Transistor | |
9 | SRA2201E |
AUK |
PNP Silicon Transistor | |
10 | SRA2201EF |
AUK |
PNP Silicon Transistor | |
11 | SRA2201M |
AUK |
PNP Silicon Transistor | |
12 | SRA2201S |
AUK |
PNP Silicon Transistor |