SQ2362ES - Vishay

SQ2362ES Automotive N-Channel MOSFET

www.vishay.com SQ2362ES Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = 10 V RDS(on) (Ω) at VGS = 4.5 V ID (A) Configuration Package SOT-23 (TO-236) 60 0.068 0.075 4.3 Single SOT-23 D FEATURES • TrenchFET® power MOSFET • AEC-Q101 qualified • 100 % Rg and UIS tested • Material categorization: fo.

Features

• TrenchFET® power MOSFET
• AEC-Q101 qualified
• 100 % Rg and UIS tested
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 D 3 G 2 S 1 G Top View Marking Code: 8Z S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Diode Conduction) Pulsed Drain Current a Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation a Operating Junction and Storage Temperature Range TC = 25 °C TC .