SPU04N60C3 - INCHANGE

SPU04N60C3 N-Channel MOSFET

Isc N-Channel MOSFET Transistor ·FEATURES ·With To-251(IPAK) package ·New revolutionary high voltage technology ·Ultra low gate charge ·High peak current capability ·Improved transconductance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconductor SPU04N60C3 ·APPLICATIONS ·Switching .

Features

·With To-251(IPAK) package
·New revolutionary high voltage technology
·Ultra low gate charge
·High peak current capability
·Improved transconductance
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconductor SPU04N60C3
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=125℃ Drain Current-Single Pulsed ±30 4.5 2.8 13.5 PD Total Dissipation @TC=25℃ 50 Tch Max. Operating.