SPN80T06 - SYNC POWER

SPN80T06 N-Channel MOSFET

The SPN80T06 is the N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suitable for synchronous rectifier application, Motor control power management and other Pow.

Features

 60V/80A, RDS(ON)=9mΩ@VGS=10V 60V/80A, RDS(ON)=13mΩ@VGS=4.5V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  TO-220-3L/PPAK5x6-8L/TO-252-2L package design PIN CONFIGURATION TO-220-3L PPAK5x6-8L TO-252 PART MARKING 2020/04/30 V.5 Page 1 SPN80T06 N-Channel Enhancement Mode MOSFET TO-220-3L/T0-252-2L PIN DESCRIPTION Pin 1 2 3 Symbol G D S PPAK5x6-8L PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D D ORDERING INFORMATION Part Number Package SPN80T06T220TGB TO-220-3L SPN80T06T252RGB TO-252-2L SPN8.