SPN4910 - SYNC POWER

SPN4910 N-Channel MOSFET

The SPN4910 is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook comput.

Features

 N-Channel 40V/10A,RDS(ON)=20mΩ@VGS=10V 40V/ 8A,RDS(ON)=24mΩ@VGS=4.5V 40V/ 6A,RDS(ON)=30mΩ@VGS=2.5V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  SOP
  –8 package design PIN CONFIGURATION(SOP
  –8) PART MARKING 2020/03/24 Ver.2 Page 1 SPN4910 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8 Symbol S1 G1 S2 G2 D2 D2 D1 D1 Description Source 1 Gate 1 Source 2 Gate 2 Drain 2 Drain 2 Drain 1 Drain 1 ORDERING INFORMATION Part Number Package SPN4910S8RGB SOP-8 ※ SPN4910S8RGB 13” Tape Reel ; Pb.