SPN3414 - SYNC

SPN3414 N-Channel MOSFET

The SPN3414 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and .

Features

 20V/4.0A,RDS(ON)=55mΩ@VGS=4.5V  20V/3.4A,RDS(ON)=70mΩ@VGS=2.5V  20V/2.8A,RDS(ON)=90mΩ@VGS=1.8V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  SOT-23-3L package design APPLICATIONS
 Power Management in Note book
 Portable Equipment
 Battery Powered System
 DC/DC Converter
 Load Switch
 DSC
 LCD Display inverter PIN CONFIGURATION(SOT-23-3L) PART MARKING 2020/02/13 Ver.5 Page 1 SPN3414 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 Symbol G S D Description Gate Source Drain ORDERING INFOR.