SPN1022 - SYNC POWER

SPN1022 Dual N-Channel MOSFET

The SPN1022 is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook comput.

Features

 N-Channel 20V/0.65A,RDS(ON)=380mΩ@VGS=4.5V 20V/0.55A,RDS(ON)=450mΩ@VGS=2.5V 20V/0.45A,RDS(ON)=800mΩ@VGS=1.8V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  ESD protected  SOT-563 (SC-89-6L) package design PIN CONFIGURATION (SOT-563 / SC-89-6L) PART MARKING 2022/09/22 Ver.3 Page 1 SPN1022 Dual N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 4 5 6 Symbol S1 G1 D2 S2 G2 D1 Description Source 1 Gate 1 Drain 2 Source 2 Gate 2 Drain1 ORDERING INFORMATION Part Number Package SPN1022S56RGB SOT-563 .