and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements compo.
8-1 Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal www.DataSheet4U.com resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 1) SPI47N10 SPP47N10,SPB47N10 Symbol min. RthJC RthJA RthJA - Values typ. max. 0.85 62 62 40 Unit K/W Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage VGS =0V, ID =2mA Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) 100 2.1 Values typ. 3 max. 4 Unit V Gate thres.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SPI47N10L |
Infineon Technologies |
SIPMOS Power-Transistor | |
2 | SPI4012 |
Superworld Electronics |
SMD POWER INDUCTORS | |
3 | SPI4015 |
Superworld Electronics |
SMD POWER INDUCTORS | |
4 | SPI4018 |
Superworld Electronics |
SMD POWER INDUCTORS | |
5 | SPI42N03S2L-13 |
Infineon Technologies |
OptiMOS Power-Transistor | |
6 | SPI-070-xx |
ISU |
SMD High Current Power Induvtor | |
7 | SPI-100-xx |
ISU |
SMD High Current Power Induvtor | |
8 | SPI-130-50 |
ISU |
SMD High Current Power Induvtor | |
9 | SPI-130-xx |
ISU |
SMD High Current Power Induvtor | |
10 | SPI-235-19 |
Sanyo Semicon Device |
Ultraminiature photointerrupter (single-transistor type) | |
11 | SPI-236-17 |
Sanyo Semicon Device |
Ultraminiature photointerrupter (single-transistor type) | |
12 | SPI-238-18 |
Sanyo Semicon Device |
Ultraminiature photointerrupter (single-transistor type) |