SIPMOS® Power Transistor Features • N channel • Enhancement mode • Avalanche rated Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current • Logic Level • dv/dt rated • 175˚C operating temperature SPD 28N03L VDS RDS(on) ID 30 0.018 30 V Ω A Type SPD28N03L SPU28N03L Package Ordering Code Packaging P-TO252 Q670.
• N channel
• Enhancement mode
• Avalanche rated
Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current
• Logic Level
• dv/dt rated
• 175˚C operating temperature
SPD 28N03L
VDS RDS(on) ID
30 0.018
30
V Ω A
Type SPD28N03L SPU28N03L
Package Ordering Code Packaging P-TO252 Q67040-S4139-A2 Tape and Reel P-TO251-3-1 Q67040-S4142-A2 Tube
Pin 1 Pin 2 Pin 3 GDS
Maximum Ratings, at Tj = 25 ˚C, unless otherwise specified
Parameter
Symbol
Continuous drain current TC = 25 ˚C, 1) TC = 100 ˚C
ID
Pulsed drain current TC = 25 ˚C Avalanche energy, single.
SPD28N03L SIPMOS® Power Transistor Features • N channel • Enhancement mode Product Summary Drain source voltage Drain-S.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SPD28N03 |
Infineon Technologies |
SIPMOS Power Transistor | |
2 | SPD28N05L |
Siemens Semiconductor Group |
SIPMOS Power Transistor | |
3 | SPD205 |
SSDI |
(SPD205 - SPD230) HYPERFAST RECOVERY RECTIFIER | |
4 | SPD205SMS |
SSDI |
(SPD205SMS - SPD230SMS) HYPERFAST RECOVERY RECTIFIER | |
5 | SPD210 |
SSDI |
(SPD205 - SPD230) HYPERFAST RECOVERY RECTIFIER | |
6 | SPD210SMS |
SSDI |
(SPD205SMS - SPD230SMS) HYPERFAST RECOVERY RECTIFIER | |
7 | SPD21N05L |
Siemens Semiconductor Group |
SIPMOS Power Transistor | |
8 | SPD21N05L |
Infineon |
Power Transistor | |
9 | SPD220 |
SSDI |
(SPD205 - SPD230) HYPERFAST RECOVERY RECTIFIER | |
10 | SPD220SMS |
SSDI |
(SPD205SMS - SPD230SMS) HYPERFAST RECOVERY RECTIFIER | |
11 | SPD22N08S2L-50 |
Infineon Technologies |
OptiMOS Power-Transistor | |
12 | SPD230 |
SSDI |
(SPD205 - SPD230) HYPERFAST RECOVERY RECTIFIER |