SPD23N05 - Siemens Semiconductor Group

SPD23N05 SIPMOS Power Transistor

SPD23N05 SPU23N05 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv /dt rated • 175°C operating temperature Pin 1 Pin 2 Pin 3 G D S Type VDS 55 V 55 V ID 22 A 22 A RDS(on) 0.06 Ω 0.06 Ω Package Ordering Code SPD23N05 SPU23N05 P-TO252 P-TO251 Q67040 - S4138 - A2 Q67040 - S4131 - A2 Maximum Ratings Parameter Symbol .

Features

resistance, junction - case Thermal resistance, junction - ambient (PCB mount)
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* Thermal resistance, junction - ambient IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA RthJA -55 ... + 175 -55 ... + 175 °C ≤ 2.7 ≤ 50 ≤ 100 55 / 175 / 56 K/W
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* when mounted on 1 " square PCB ( FR4 );for recommended footprint Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Values typ. max. Unit Drain- source breakdown voltage V GS = 0 V, ID = 0.25 mA, Tj = 25 °C V (BR)DSS V 55 - Gate threshold voltage V GS=V DS, ID = 40 µA V GS.