SPB17N80C3 - Infineon Technologies

SPB17N80C3 Cool MOS Power Transistor

CoolMOS® Power Transistor Features • new revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge • Ultra low effective capacitances Product Summary V DS R DS(on)max @ Tj = 25°C Q g,typ SPB17N80C3 800 V 0.

Features

• new revolutionary high voltage technology
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
• Ultra low gate charge
• Ultra low effective capacitances Product Summary V DS R DS(on)max @ Tj = 25°C Q g,typ SPB17N80C3 800 V 0.29 Ω 91 nC PG-TO263 CoolMOSTM 800V designed for:
• Industrial application with high DC bulk voltage
• Switching Application (i.e. active clamp forward) Type SPB17N80C3 Package PG-TO263 Marking 17N80C3 Maximum ratings, at T j=25 °C, unless otherwise specified Paramete.