SP8651 - SamHop Microelectronics

SP8651 Dual N-Channel Enhancement Mode Field Effect Transistor

Green Product SP8651 Ver 3.7 S a mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max 14.0 @ VGS=4.5V 15.0 @ VGS=4.0V 24V 10A 16.0 @ VGS=3.7V 17.5 @ VGS=3.1V 21.0 @ VGS=2.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Pro.

Features

Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. D2 D2 D1 5 6 7 8 4 3 2 1 G2 S2 G1 S1 S mini 8 P IN 1 D1 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed d c ad Limit 24 ±12 TA=25°C TA=70°C 10 8 60 56 TA=25°C TA=70°C 1.32 0.84 -55 to 150 Units V V A A A mJ W W °C Single Pulse Avalanche Energy Maximum Power Dissipation a Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R .