SP8013 - SamHop Microelectronics

SP8013 P-Channel Enhancement Mode Field Effect Transistor

Green Product Sa mHop Microelectronics C orp. P-Channel Enhancement Mode Field Effect Transistor SP8013 Ver 1.0 PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Max -20V -20A 7.9 @ VGS=-10V 11.2 @ VGS=-4.5V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. Pin 1 TSON 3.3 x 3.3 D5 D6 D7 D8 ABSOLUTE.

Features

Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. Pin 1 TSON 3.3 x 3.3 D5 D6 D7 D8 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous c IDM -Pulsed a c TA=25°C TA=70°C PD Maximum Power Dissipation TA=25°C TA=70°C TJ, TSTG Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient 4G 3S 2S 1S Limit -20 ±20 -20 -16 -115 1.67 1.07 -55 to 150 75 Units V V A A A W W °C °C.