SP4412 - SamHop Microelectronics

SP4412 N-Channel Enhancement Mode Field Effect Transistor

Green Product Sa mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor SP4412 Ver 1.1 PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Max 19 @ VGS=10V 30V 16A 31 @ VGS=4.5V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. Pin 1 TSON 3.3 x 3.3 D5 D6 D7 D8 ABSOLUTE MAXIMUM .

Features

Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. Pin 1 TSON 3.3 x 3.3 D5 D6 D7 D8 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage TC=25°C ID Drain Current-Continuous a c TC=100°C TA=25°C TA=70°C IDM -Pulsed c EAS Single Pulse Avalanche Energy d PD Maximum Power Dissipation a TA=25°C TA=70°C TJ, TSTG Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA R JC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Juncti.