SMW70N06-14 - TEMIC

SMW70N06-14 N-Channel MOSFET

TEMIC Siliconix SMW70N06·14 N-Channel Enhancement-Mode lransistor Product Summary V(BR)DSS (V) 60 rnS(on) (Q) 0.014 TO-247AD )0 I In (A) 70 l DRAIN connected to TAB n Go-J GDS ThpView S N-Channel MOSFET Absolute Maximum Ratings (Tc = 25°C Unless Otherwise Noted) Gate-Source Voltage Parameter Continuous Drain Current Pulsed Drain Current Aval.

Features

Condition Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward TIansconductanceb V(BR)DSS VGS(tb) IGSS loss 10(on) toston) gfs VGS ~ OY,Io ~ 250 ItA Vos ~ VGS, 10 ~ 1 rnA VOS ~ OY, VGS ~ ±20V VOS ~48Y,VGS ~ OV Vos ~ 48 Y, VGS ~ OY, TJ ~ 125'C VOS -lOY, VGS - 10V VGS -10Y,ln - 35A VGS ~ lOY, 10 ~ 35 A, TJ ~ 125'C VOS ~ 15 Y, 10 ~ 35 A Dynabllc Input Capacitance C;ss Output Capacitance Reverse TIansfer Capacitance Co" VGS ~ OY, Vos ~ ZSY, f~ 1 MHz c,.s Thtal Gat.