SMV1412 - Knox Semiconductor Inc

SMV1412 SILICON HYPERABRUPT TUNING DIODES

SILICON HYPERABRUPT TUNING DIODES • High capacitance ratios • Linear tuning between 2 and 8 volts • Available over a broad range junction capacitances • Satisfies a large number of broadband applications thru the VHF frequency band SMV1401 - SMV1412 DIODE CAPACITANCE TUNING RATIO (TR) PART (CT) C• 1V / C• 10V C•2V / C•10V NUMBER pF @ 1V• 1MHz pF @ 2V•1 MHz .

Features

07, -08, -09, -10, -15 Device Dissipation (PD) Ta = 25°C Junction Temperature (TJ) Reverse Breakdown Voltage (VBR) 10 µAdc Max Reverse Leakage Current (IR) Vr = 10 Vdc Operating Temperature (Topr) Storage Temperature (Tstg) Capacitance Tolerance ♦♦♦ 250 mW 125°C 12 Vdc Min 0.1 µAdc -55° to + 125°C -65° to + 150°C Standard Device ± 20% Package Styles Requires adding a dash suffix number to the part number SOT23 SINGLE SOT23 Common Anode SOT23 Common Cathode SOT223 SOD323 SOD523 (SC79, SC90) TO92 2 Terminal (TMV) CHIPS -08 -09 -10 -14 -06 -07 -15 -01 P.O. BOX 609
• ROCKPORT, MAINE 04856
• 20.