SMUN5313DW - SeCoS

SMUN5313DW NPN / PNP Digital Small Signal Transistors

The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a sing.

Features

Millimeter Min. Max. 0.100 REF. 0.525 REF. 0.08 0.15 8° 0.650 TYP. MAXIMUM RATINGS AND THERMAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q 2, minus sign for Q1(PNP) omitted) Parameter Symbol Value Unit Collector - Base Voltage VCBO 50 Vdc Collector - Emitter Voltage VCEO 50 Vdc Collector Currrent
  – Continuous IC 100 mAdc One Junction Heated Thermal Characteristics Total Device Dissipation, TA=25°C Total Device Dissipation, Derate above 25°C Thermal Resistance, Junction to Ambient PD RθJA 187(1) 256(2) 1.5(1) 2.0(2) 670(1) 490(2) mW mW/°C °C/W Both.